An international research team has developed a new technology for the manufacture of high quality transistors from 2D materials, which significantly reduces the cost of their production..
Scientists have demonstrated that lithography using a probe heated above 100 °C, has surpassed standard methods for making metal electrodes on 2D semiconductors. These transition materials could potentially replace silicon in the atomic chips of the future. The proposed method, called thermal scanning probe lithography (t-SPL), has several advantages over modern alternatives..
First of all, the new technology significantly improves the quality of 2D transistors by removing the Schottky barrier, which prevents the flow of electrons at the interface between the metal and the 2D substrate. In addition, unlike electron beam lithography, t-SPL allows chip designers to easily apply electrode patterns.
The new method helps to significantly reduce production costs because it does not require special environmental conditions and does not consume as much energy as electron beam lithography. Therefore, it can be used much easier on an industrial scale..
Image shows a monoatomic layer of molybdenum disulfide (MoS2) with electrodes formed by thermal scanning probe lithography
Scientists hope the technology will be integrated into 3D printers equipped with nanoscale tools in the future. In fact, such plans could very well be realized as 3D printing technologies are now rapidly improving. Recently, a team of engineers introduced a method for 3D printing intelligent piezoelectric materials.
text: Ilya Bauer, photo: NYU Tandon, Shutterstock